GaAs Infrared Emitting Diode SEP8505/8506

Description:

The SEP8505 is a gallium arsenide infrared emitting diode transfer molded in a T-1 red plastic package. Transfer molding of this device assures superior optical centerline performance compared to other provide a simple method of polarity indentification

Features:

1)        T-1 package

2)        15°(nominal) beam angle

3)        935 nm wavelength

4)        Consistent on-axis optical properties

5)        Mechanically and sprctrally matched to SDP8405 phototransistor and SDP8105 photodarlington

6)        Temperature range: -40℃——+85℃